Silicon Nanowire Transistors by Ahmet Bindal, Sotoudeh Hamedi-Hagh

Silicon Nanowire Transistors



Silicon Nanowire Transistors pdf

Silicon Nanowire Transistors Ahmet Bindal, Sotoudeh Hamedi-Hagh ebook
ISBN: 9783319271750
Page: 144
Format: pdf
Publisher: Springer International Publishing


Electron and hole mobility in sub-10nm silicon nanowire FETs on (100) SOI has been systematically investigated experimentally. Nanowire transistors with triangular cross sections (TNWTs) are proposed and studied. We study in detail the properties of silicon nanowire transistors. Subthreshold behavior of junctionless silicon nanowire transistors from atomic scale simulations on ResearchGate, the professional network for scientists. 6.3.4 Silicon Nanowire Transistor. The silicon nanowire transistor (SNWT) with gate-all-around (GAA) structure can be considered as one of the potential candidates for ultimate scaling due to its. Intruded Nickel-Silicide Contacts. Gate-induced drain leakage (GIDL) in gate-all-around silicon nanowire transistors (SNWTs) are investigated and verified by experiments and TCAD studies. This paper deals with the study of modelling double gate silicon nanowire transistors. Each generation of integrated circuit (IC) technology has led to new applications. All existing transistors are based on the formation of junctions. Weber,*,†,§ Lutz Geelhaar,� Andrew P. Hochbaum, Rong Fan, and Peidong Yang*. Siliconnanowire (NW) transistors were fabricated in a top-down process. Silicon-Nanowire Transistors with. IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. Polarity-Controllable Silicon Nanowire Transistors. Silicon Vertically Integrated Nanowire. Experimental study on the subthreshold swing of silicon nanowire transistors.





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